The challenges in guided self-assembly of Ge and InAs quantum dots on Si

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 195-199

  Zhao, Z M ^a   Yoon, T S ^a   Feng, W ^a   Li, B Y ^a   Kim, J H ^a   Liu, J ^a   Hulko, O ^a   Xie, Y H ^a   Kim, H M ^b   Kim, K B ^b   Kim, H J ^a   Wang, K L ^a   Ratsch, C ^a   Caflisch, R ^a   Ryu, D Y ^c   Russell, T P ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Seoul National University   (South Korea)

^c UNIVERSITY OF MASSACHUSETTS   (United States)

Author keywords

Ge; InAs; Quantum dots; Self assembly

Indexed keywords

EPITAXIAL GROWTH; SELF ASSEMBLY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON;

GUIDED ASSEMBLY PROCESSES; INDIUM ARSENIDE (INAS); SI (001) SUBSTRATES; STRAIN FIELDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33748662873     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.407     Document Type: Article

References (19)

1. Kim H.J., Zhao Z.M., and Xie Y.H. Phys. Rev., B 68 (2003) 205312
2. Schmidt O.G., Jin-Phillipp N.Y., Lange C., Denker U., Eberl K., Schreiner R., Gräbeldinger H., and Schweizer H. Appl. Phys. Lett. 77 (2000) 4139
3. Kamins T.I., and Stanley Williams R. Appl. Phys. Lett. 71 (1997) 1201
4. Li R.R., Dapkus P.D., Thompson M.E., Jeong W.G., Harrison C., Chaikin P.M., Register R.A., and Adamson D.H. Appl. Phys. Lett. 76 (2000) 1689
5. Zhong Z., and Bauer G. Appl. Phys. Lett. 84 (2004) 1922
6. Yang B., Liu F., and Lagally M.G. Phys. Rev. Lett. 92 (2004) 025502
7. Romanov A.E., Petroff P.M., and Speck J.S. Appl. Phys. Lett. 74 (1999) 2280
8. Xie Y.H., Gilmer G.H., Roland C., Silverman P.J., Buratto S.K., Cheng J.Y., Fitzgerald E.A., Kortan A.R., Schuppler S., Marcus M.A., and Citrin P.H. Phys. Rev. Lett. 73 (1994) 3006
9. Mansky P., Liu Y., Huang E., Russell T.P., and Hawker C. Science 275 (1997) 1458
10. Kim H.J., and Xie Y.H. Appl. Phys. Lett. 79 (2001) 263
11. Yu Shiryaev S., Jensen F., Hansen J.L., Petersen J.W., and Larsen A.N. Phys. Rev. Lett. 78 (1997) 503
12. Ross F.M., Tersoff J., and Tromp R.M. Phys. Rev. Lett. 80 (1998) 984
13. Xie Y.H., Samavedam S.B., Bulsara M., Langdo T.A., and Fitzgerald E.A. Appl. Phys. Lett. 71 (1997) 3567
14. Kim H.J., Zhao Z.M., Liu J., Ozolins V., and Xie Y.H. J. Appl. Phys. 95 (2004) 6065
15. Huang L., Liu F., and Gong X.G. Phys. Rev., B 70 (2004) 155320
16. Ratsch C., Gyure M.F., Caflisch R.E., Gibou F., Petersen M., Kang M., Garcia J., and Vvedensky D.D. Phys. Rev. B 65 (2002) 195403
17. Kamins T.I., and Williams R.S. Appl. Phys. Lett. 71 (1997) 1201
18. Zhong Z., Halilovic A., Mühlberger M., Schäffler F., and Bauer G. J. Appl. Phys. 93 (2003) 6258
19. Kim J.S., et al. J. Appl. Phys. 94 (2003) 6603 see, for example