Fabrication of a far-infrared photodetector based on InAs/GaAs quantum-dot superlattices

Optical Engineering

Volumn 42, Issue 1, 2003, Pages 119-123

  Cheng, Yi Chang ^a   Yang, San Te Ching Ming ^b   Yang, Jyh Neng ^a   Lan, Wen How ^b   Chang, Liann Be ^c   Hsieh, Li Zen ^c  

^a MINGHSIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b Mat Res and Devmt Center   (Taiwan)

^c NATIONAL DEFENSE UNIVERSITY   (Taiwan)

Author keywords

FTIR; InAs GaAs; Photodetector; Quantum dots; Superlattice

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES;

FAR-INFRARED PHOTODETECTORS; QUANTUM-DOT SUPERLATTICES;

INFRARED DETECTORS;

EID: 0037254303     PISSN: 00913286     EISSN: None     Source Type: Journal    
DOI: 10.1117/1.1525277     Document Type: Article

References (12)

1. K. Mukai, Y. Nakata, H. Sholi, M. Sugawara, K. Ohisubo, N. Yokoyama, and H. Ishikawa, "Lasing with low threshold current and high output power from columnar-shaped InAs/GaAs quantum dots," Electron. Lett. 34, 1588-1590 (1998).
2. M. Grundmann, R. F. C. Heinnichsdorff, and M. H. Bimberg, "Quantum dot lasers: recent progress in theoretical understanding and demonstration of high-output-power operation," Appl. Phys. B: Lasers Opt. 69, 413-416 (1999).
3. J. W. Kim, J. E. Oh, S. C. Hong, C. H. Park, and T. K. Yoo, "Room temperature far infrared (8-10 μm) photodetectors using self-assembled InAs quantum dots with high detectivity," IEEE Electron Device Lett. 21(7), 329-331 (2000).
4. J. Phillips, P. Bhattacharya, S. W. Kennerly, D. W. Beekman, and M. Dutta, "Self-Assembled InAs-GaAs Quantum-Dot Intersubband Detectors," IEEE J. Quantum Electron. 35(6), 936-944 (1999).
5. B. Levine, K. Choi, C. Bethea, J. Walker, and R. Malik, "10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattice," Appl. Phys. Lett. 50, 1092-1094 (1987).
6. G. Hasnian, B. F. Levine, C. G. Bethea, R. A. Logan, J. Walker, and R. J. Malik, "GaAs/AlGaAs multiquantum well infrared detector arrays using etched grating," Appl. Phys. Lett. 54, 2515-2517 (1989).
7. H. Benisty, C. M. Sotomayor-Torres, and C. Weisbuch, "Intrinsic mechanism for the poor luminescence properties of quantum-box systems," Phys. Rev. B 50, 14309-14326 (1994).
8. L. Goldstein, F. Glas, J. Y. Marzin, M. N. Charasse, and G. LeRoux, "Growth by molecular beam epitaxy and characterization of InAs/GaAs strained layer superlattices," Appl. Phys. Lett. 47, 1099-1101 (1985).
9. 1-xAs on GaAs during the pseudomorphic growth regime," Appl. Phys. Lett. 53, 684-686 (1988).
10. J. M. Arias, M. Zandian, J. G. Pasko, J. Bajaj, L. J. Kozlowski, W. E. Tennant, and R. E. Dewames, "MBE HgCdTe IRFPA flexible manufacturing," Proc. SPIE 2274, 2-16 (1994).
11. G. Destefanis, P. Audehert, E. Mottin, and P. Rambaud, "High performance LWIR 256 × 256 HgCdTe focal plane array operating at 88 K," Proc. SPIE 3061, 111-116 (1997).
12. Y. C. Cheng, C. M. Yang, W. H. Lan, J. N. Yang, and L. B. Chang, "Study of the Fourier-transform infrared spectra of InAs/GaAs quantum dot superlattices for far-infrared photodetectors," Jpn. J. Appl. Phys., Part 1 41 (part 1, 3A), 1386-1389 (2002).