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Volumn 101, Issue 1, 2007, Pages

Effect of Si-spacer thickness on optical properties of multistacked Ge quantum dots grown by rapid thermal chemical vapor deposition

(6) Park, C J a Yang, W C a Cho, H Y a Kim, Min Choul b Kim, Sung b Choi, Suk Ho b

a Dongguk University (South Korea)

b Kyung Hee University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GERMANIUM COMPOUNDS; HIGH RESOLUTION ELECTRON MICROSCOPY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RAMAN SCATTERING; TRANSMISSION ELECTRON MICROSCOPY;

GE-SI INTERMIXING; PL EMISSION BANDS; RAPID THERMAL CHEMICAL VAPOR DEPOSITION; SI SPACER THICKNESS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33846321604 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2402590 Document Type: Article

Times cited : (7)

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