Patterning of sub-10-nm Ge islands on Si(100) by directed self-assembly

Applied Physics Letters

Volumn 87, Issue 17, 2005, Pages 1-3

  Guise, Olivier ^a   Yates Jr , John T ^a   Levy, Jeremy ^a   Ahner, Joachim ^b   Vaithyanathan, Venugopalan ^c   Schlom, Darrell G ^c  

^a UNIVERSITY OF PITTSBURGH   (United States)

^b SEAGATE TECHNOLOGY   (United States)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON-BASED TEMPLATES; HIGH-RESOLUTION ELECTRON BEAM LITHOGRAPHY; QUANTUM COMPUTING;

ATOMIC FORCE MICROSCOPY; ELECTRON BEAM LITHOGRAPHY; GERMANIUM; NANOSTRUCTURED MATERIALS; QUANTUM THEORY; SPUTTER DEPOSITION; ULTRAHIGH VACUUM;

SELF ASSEMBLY;

EID: 28344457103     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2112198     Document Type: Article

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