Stress-driven surface evolution in heteroepitaxial thin films: Anisotropy of the two-dimensional roughening mode

Journal of Materials Research

Volumn 14, Issue 8, 1999, Pages 3247-3256

  Ozkan, Cengiz S ^a   Nix, William D ^b   Gao, Huajian ^b  

^a Applied Micro Circuits Corporation   (United States)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; DISLOCATIONS (CRYSTALS); ELASTICITY; FILM GROWTH; PERTURBATION TECHNIQUES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SURFACE ROUGHNESS; THICK FILMS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

STRESS-DRIVEN SURFACE EVOLUTION;

HETEROJUNCTIONS;

EID: 0032646147     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1999.0439     Document Type: Article

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