The evolution of electroluminescence in Ge quantum-dot diodes with the fold number

Applied Physics Letters

Volumn 85, Issue 25, 2004, Pages 6107-6109

  Peng, Y H ^a   Hsu, Chih Hsiung ^a   Kuan, C H ^a   Liu, C W ^a   Chen, P S ^b   Tsai, M J ^b   Suen, Y W ^c  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTROLUMINESCENCE; ENERGY GAP; HIGH TEMPERATURE EFFECTS; OPTICAL COMMUNICATION; SELF ASSEMBLY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; STRAIN; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM;

GROWTH TEMPERATURE; LATTICE MISMATCH; MULTIPLE QUANTUM DOTS (MQD); QUANTUM CONFINEMENT;

LIGHT EMITTING DIODES;

EID: 20444477540     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1842371     Document Type: Article

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