Improved performance of MBE grown quantum-dot lasers with asymmetric dots in a well design emitting near 1.3 μm

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 742-747

  Krebs, R ^a   Deubert, S ^a   Reithmaier, J P ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

A2. Laser diodes; A2. Self organized growth; A3. Molecular beam epitaxy; A3. Quantum dots; B1. Gallium arsenide compounds

Indexed keywords

LASER OPTICS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM DOT (QD) LASERS;

SEMICONDUCTOR LASERS;

EID: 0037380475     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02385-0     Document Type: Conference Paper

References (14)

1. Stintz A., Liu G.T., Lester L.F., Malloy K.J. IEEE Phot. Technol. Lett. 12:2000;591.
2. Shchekin O.B., Park G., Huffaker D.L., Mo Q., Deppe D.G. IEEE J. Quantum Electron. 36:2000;472.
3. Mukai K., Nakata Y., Otsubo K., Sugawara M., Yokoyama N., Ishikawa H. IEEE J. Quantum Electron. 36:2000;472.
4. Lester L.F., Stintz A., Li H., Newell T.C., Pease E.A., Fuchs B.A., Malloy K.J. IEEE Phot. Technol. Lett. 11:1999;931.
5. Schäfer F., Mayer B., Reithmaier J.P., Forchel A. Appl. Phys. Lett. 73:1998;2863.
6. Schäfer F., Reithmaier J.P., Forchel A. Appl. Phys. Lett. 74:1999;2915.
7. Liu G.T., Stintz A., Li H., Newell T.C., Gray A.L., Varangis P.M., Malloy K.J., Lester L.F. IEEE J. Quantum Electron. 36:2000;1272.
8. Klopf F., Krebs R., Reithmaier J.P., Forchel A. IEEE Phot. Technol. Lett. 13:2001;764.
9. Klopf F., Krebs R., Wolf A., Emmerling M., Reithmaier J.P., Forchel A. Electron. Lett. 37:2001;634.
10. Krebs R., Klopf F., Rennon S., Reithmaier J.P., Forchel A. Electron. Lett. 37:2001;1223.
11. Krebs R., Klopf F., Reithmaier J.P., Forchel A. Jpn. J. Appl. Phys. 41:2002;1158.
12. Oster A., Erbert G., Wenzel H. Electron. Lett. 33:1997;864.
13. Shchekin O.B., Park G., Huffaker D.L., Deppe D.G. Appl. Phys. Lett. 77:2000;466.
14. Shchekin O.B., Deppe D.G. Appl. Phys. Lett. 80:2002;3277.