Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 71, Issue 1, 1997, Pages 22-24

  Heinrichsdorff, F ^a   Mao, M H ^a   Kirstaedter, N ^a   Krost, A ^a   Bimberg, D ^a   Kosogov, A O ^a,b   Werner, P ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SPECTRUM ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

CONTINUOUS WAVE LASING; INDIUM ARSENIDE; ROOM TEMPERATURE PHOTOLUMINESCENCE INTENSITY; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031558192     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120556     Document Type: Article

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