Feasibility study for thermal-field directed self-assembly of heteroepitaxial quantum dots

Applied Physics Letters

Volumn 88, Issue 9, 2006, Pages

  Friedman, Lawrence H ^a   Xu, Jian ^a  

^a The Center for Nanotechnology Education and Utilization   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

2D COMPUTATIONAL MODEL OF GE DOTS; CONTROL RANDOMNESS AND DISORDER; FEASIBILITY STUDY FOR THERMAL-FIELD DIRECTED SELF-ASSEMBLY; HETEROEPITAXIAL; SAQD TECHNOLOGY;

COMPUTATIONAL METHODS; DEMONSTRATIONS; FINITE ELEMENT METHOD; HEATING; SELF ASSEMBLY; SURFACE PROPERTIES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33644680543     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2179109     Document Type: Article

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