Photothermal activation of shallow dopants implanted in silicon

Journal of Electronic Materials

Volumn 36, Issue 12, 2007, Pages 1735-1747

  Fiory, A T ^a   Stevenson, A ^b   Agarwal, A ^c   Ravindra, N M ^a  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b AUBURN UNIVERSITY   (United States)

^c Submicron Development Center   (United States)

Author keywords

Infrared lamps; Optical process; Rapid thermal annealing; Temperature

Indexed keywords

ELECTRICAL SHEET RESISTANCE; OPTICAL HEATING; OPTICAL PROCESS; PHOTOTHERMAL ACTIVATION;

FILM THICKNESS; INCANDESCENT LAMPS; ION IMPLANTATION; OXIDE FILMS; PHOTOEXCITATION; SILICON; SILICON WAFERS;

DOPING (ADDITIVES);

EID: 36148937498     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0259-5     Document Type: Article

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