RTP for shallow junction formation - Monitoring with repeatable, reliable sheet resistance measurements

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 199-202

  Aderhold, Wolfgang ^a   Jain, Amitabh ^b   Foad, Majeed ^a   Mayur, Abhilash ^a  

^a APPLIED MATERIALS INC   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

4-POINT PROBE; AMORPHISATION; IMPLANT PROFILE; JUNCTION DEPTH; LOW ENERGIES; MEASUREMENT ARTIFACTS; P-N JUNCTION; SHALLOW JUNCTION; SHEET RESISTANCE MEASUREMENTS; SPREADING RESISTANCE PROFILING;

ELECTRIC RESISTANCE; LANTHANUM COMPOUNDS; PROBES; SEMICONDUCTOR JUNCTIONS; SHEET RESISTANCE;

ION IMPLANTATION;

EID: 78649865488     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924124     Document Type: Conference Paper

References (4)

1. M. A. Foad, "Optimization and future challenges of ultra-shallow junction formation", invited talk, this conferece.
2. A. Jain "Spike annealing for ultra shallow junction Formation" Electro Chem. Soc. Meeting, Toronto, 2000
3. T. Clarysse (personal communication)
4. th Int. Workshop, USJ-97