Diffusion of phosphorus and boron into silicon at low temperatures by heating with light irradiation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 12 A, 1997, Pages 7433-7436

  Ishikawa, Yutaka ^a   Maruyama, Mitsuharu ^a,b  

^a NIPPON INSTITUTE OF TECHNOLOGY   (Japan)

^b Okaya Electric Industries Co Ltd   (Japan)

Author keywords

Boron; Diffusion; Light irradiation; Low temperature; Phosphorus; Silicon

Indexed keywords

BORON; CHEMICAL VAPOR DEPOSITION; CRYSTAL IMPURITIES; HEATING; INTERFACES (MATERIALS); IRRADIATION; LOW TEMPERATURE EFFECTS; OXIDES; PHOSPHORUS; SILICON;

LIGHT IRRADIATION; SPIN ON IMPURITY SOURCE; TUNGSTEN HALOGEN LAMP;

DIFFUSION IN SOLIDS;

EID: 0031382115     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.7433     Document Type: Article

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