Study of the effect of ultraviolet (UV) and vacuum ultraviolet (VUV) photons on the minority carrier lifetime of single crystal silicon processed by rapid thermal and rapid photothermal processing

Journal of Electronic Materials

Volumn 28, Issue 12, 1999, Pages 1394-1398

  Venkataraman, S ^a   Singh, R ^a   Parihar, V ^a   Poole, K F ^a   Rohatgi, A ^b   Yeludur, V ^b   Ebong, A ^b  

^a CLEMSON UNIVERSITY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; INTEGRATED CIRCUIT MANUFACTURE; PHOTONS; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING; SILICON SOLAR CELLS; SINGLE CRYSTALS; THERMAL CYCLING; ULTRAVIOLET RADIATION;

MINORITY CARRIER LIFETIME; RAPID PHOTOTHERMAL PROCESSING (RPP);

SILICON WAFERS;

EID: 0033280397     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0128-5     Document Type: Article

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