A thermal annealing of ion-implanted silicon

9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001

Volumn , Issue , 2001, Pages 125-131

  Lojek, B ^a   Whiteman, M ^a   Ahrenkiel, R ^b  

^a ATMEL CORPORATION   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITED STATES; HEAT TREATMENT; ION IMPLANTATION; PHOTOEXCITATION; RAPID THERMAL ANNEALING;

ATHERMAL COMPONENTS; DEEP-LEVEL DEFECTS; ENERGY LOCALIZATION; ION-IMPLANTED SILICON; META-STABLE STATE; OPTICAL IRRADIATION; SUBMICRON DEVICES; THERMAL-ANNEALING;

ANNEALING;

EID: 84982319052     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2001.1013755     Document Type: Conference Paper

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