메뉴 건너뛰기




Volumn 1, Issue 3-4, 1998, Pages 207-218

Dopant diffusion studies and free carrier lifetimes during rapid thermal processing of semiconductors

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0347569924     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(98)00041-9     Document Type: Article
Times cited : (3)

References (31)
  • 1
    • 84908863776 scopus 로고
    • Pantelides ST, editor. Gordon and Breach Science publishers
    • Pantelides ST. In: Pantelides ST, editor. Deep centers in silicon. Gordon and Breach Science publishers, 1986. p. 1.
    • (1986) Deep Centers in Silicon , pp. 1
    • Pantelides, S.T.1
  • 2
    • 0001599099 scopus 로고
    • Pantelides ST, editor. Gordon and Breach Science publishers
    • Watkins GD. In: Pantelides ST, editor. Deep centers in silicon. Gordon and Breach Science publishers, 1986. p. 147.
    • (1986) Deep Centers in Silicon , pp. 147
    • Watkins, G.D.1
  • 3
    • 0347650432 scopus 로고
    • Pantelides ST, editor. Gordon and Breach Science publishers
    • Peaker AR, Hamilton B. In: Pantelides ST, editor. Deep centers in silicon. Gordon and Breach Science publishers, 1986. p. 349.
    • (1986) Deep Centers in Silicon , pp. 349
    • Peaker, A.R.1    Hamilton, B.2
  • 5
    • 0016543933 scopus 로고
    • The standard thermodynamic functions for the formation of electrons and holes in Ge, Si, GaAs and GaP
    • Thurmond CD. The standard thermodynamic functions for the formation of electrons and holes in Ge, Si, GaAs and GaP. J Electrochem Soc 1975;122:1133.
    • (1975) J Electrochem Soc , vol.122 , pp. 1133
    • Thurmond, C.D.1
  • 9
    • 0022013613 scopus 로고
    • Temperature transients in heavily doped and undoped silicon using rapid thermal annealing
    • Seidel TE, Lischner DJ, Pai CS, Lau SS. Temperature transients in heavily doped and undoped silicon using rapid thermal annealing. J Appl Phys 1985;57(4):1317-21.
    • (1985) J Appl Phys , vol.57 , Issue.4 , pp. 1317-1321
    • Seidel, T.E.1    Lischner, D.J.2    Pai, C.S.3    Lau, S.S.4
  • 14
    • 0343416558 scopus 로고
    • Modeling of dopant diffusion during rapid thermal annealing
    • Fair RB. Modeling of dopant diffusion during rapid thermal annealing. J Vac Sci Technol A 1986;4(3):926-32.
    • (1986) J Vac Sci Technol A , vol.4 , Issue.3 , pp. 926-932
    • Fair, R.B.1
  • 15
    • 0024607632 scopus 로고
    • Anomalous transient diffusion of ion implanted dopants: A phenomenological model
    • Michel AE. Anomalous transient diffusion of ion implanted dopants: a phenomenological model. Nucl Instrum Methods B 1989;37-38:379-83.
    • (1989) Nucl Instrum Methods B , vol.37-38 , pp. 379-383
    • Michel, A.E.1
  • 16
    • 0006420115 scopus 로고
    • Some aspects of damage annealing in ion-implanted silicon: Discussion in terms of dopant anomalous diffusion
    • Servidori M, Sourek Z, Solmi S. Some aspects of damage annealing in ion-implanted silicon: discussion in terms of dopant anomalous diffusion. J Appl Phys 1987;62(5): 1723-8.
    • (1987) J Appl Phys , vol.62 , Issue.5 , pp. 1723-1728
    • Servidori, M.1    Sourek, Z.2    Solmi, S.3
  • 17
    • 0024718616 scopus 로고
    • The enhanced diffusion of low-concentration phosphorus, arsenic and boron in silicon during IR-heating
    • Ishikawa Y, Yarnauchi K, Nakamichi I. The enhanced diffusion of low-concentration phosphorus, arsenic and boron in silicon during IR-heating. Jpn J Appl Phys 1989;28:L1319-L1321.
    • (1989) Jpn J Appl Phys , vol.28
    • Ishikawa, Y.1    Yarnauchi, K.2    Nakamichi, I.3
  • 19
    • 0026624487 scopus 로고
    • Low temperature photo-assisted oxidation of silicon
    • Kazor A, Boyd IW. Low temperature photo-assisted oxidation of silicon. Appl Surf Sci 1992;54:460.
    • (1992) Appl Surf Sci , vol.54 , pp. 460
    • Kazor, A.1    Boyd, I.W.2
  • 22
    • 0001669864 scopus 로고
    • Entropy of ionization and temperature variation of ionization levels of defects in semiconductors
    • Van Vechten JA. Entropy of ionization and temperature variation of ionization levels of defects in semiconductors. Phys Rev B 1976;14:3539.
    • (1976) Phys Rev B , vol.14 , pp. 3539
    • Van Vechten, J.A.1
  • 25
    • 0001339535 scopus 로고
    • Activation enthalpy of recombination-enhanced vacancy migration in Si
    • Van Vechten JA. Activation enthalpy of recombination-enhanced vacancy migration in Si. Phys Rev B 1988;38:9913.
    • (1988) Phys Rev B , vol.38 , pp. 9913
    • Van Vechten, J.A.1
  • 26
    • 0001783832 scopus 로고
    • Simple ballistic model for vacancy migration
    • Van Vechten JA. Simple ballistic model for vacancy migration. Phys Rev B 1975;12:1247.
    • (1975) Phys Rev B , vol.12 , pp. 1247
    • Van Vechten, J.A.1
  • 29
    • 0018038726 scopus 로고
    • Experimental comparison of localized and free carrier Auger recombination in silicon
    • Schmid W. Experimental comparison of localized and free carrier Auger recombination in silicon. Solid State Electron 1978;21:1285.
    • (1978) Solid State Electron , vol.21 , pp. 1285
    • Schmid, W.1
  • 30
    • 0018032779 scopus 로고
    • Measurement of Auger recombination in silicon by laser excitation
    • Svantesson KG, Nillson NG. Measurement of Auger recombination in silicon by laser excitation. Solid State Electron 1978;21:1603.
    • (1978) Solid State Electron , vol.21 , pp. 1603
    • Svantesson, K.G.1    Nillson, N.G.2
  • 31
    • 0018035946 scopus 로고
    • Carrier density dependence of Auger recombination
    • Haug A. Carrier density dependence of Auger recombination. Solid State Electron 1978;21:1281.
    • (1978) Solid State Electron , vol.21 , pp. 1281
    • Haug, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.