Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method

Thin Solid Films

Volumn 459, Issue 1-2, 2004, Pages 203-207

  Martinez F L ^a   Ruiz Merino, R ^a   Del Prado, A ^b   San Andres E ^b   Martil I ^b   Gonzalez Diaz G ^b   Jeynes, C ^c   Barradas, N P ^d   Wang, L ^e   Reehal, H S ^e  

^a TECHNICAL UNIVERSITY OF CARTAGENA   (Spain)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^c UNIVERSITY OF SURREY   (United Kingdom)

^d INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^e LONDON SOUTH BANK UNIVERSITY   (United Kingdom)

Author keywords

Bonding energy; Hydrogen; Network bond reactions; Silicon nitride

Indexed keywords

BONDING; DEPOSITION; ELECTRON CYCLOTRON RESONANCE; HYDROGEN BONDS; HYDROGENATION; ION BEAMS; MICROELECTRONICS; MOLECULAR STRUCTURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE;

BONDING STRUCTURE; HYDROGEN CONTENT;

THIN FILMS;

EID: 2942622296     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.12.084     Document Type: Conference Paper

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