Substrate-dependent wetting layer formation during GaN growth: Impact on the morphology of the films

Journal of Applied Physics

Volumn 102, Issue 4, 2007, Pages

  Sidorenko, A ^a   Peisert, H ^a   Neumann, H ^b   Chass T ^a  

^a UNIVERSITY OF TÜBINGEN   (Germany)

^b LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; WETTING; X RAY PHOTOELECTRON SPECTROSCOPY;

SPECTROSCOPY MEASUREMENTS; WETTING LAYER FORMATION;

SEMICONDUCTOR GROWTH;

EID: 34548381366     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2770869     Document Type: Article

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