Dynamically stable gallium-induced 3×3-SiC (0001) surface for two-dimensional GaN nucleation by molecular-beam epitaxy

Journal of Applied Physics

Volumn 95, Issue 7, 2004, Pages 3761-3764

  Jeganathan, K ^a   Shimizu, M ^a   Okumura, H ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL BONDS; COALESCENCE; DESORPTION; ETCHING; GALLIUM; GALLIUM NITRIDE; GROWTH KINETICS; MOLECULAR BEAM EPITAXY; NUCLEATION; OPTOELECTRONIC DEVICES; ORGANIC SOLVENTS; THERMODYNAMIC STABILITY;

IMPINGING ADATOMS; SURFACE RECONSTRUCTIONS;

SILICON CARBIDE;

EID: 1942446231     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1650900     Document Type: Article

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