GaN nucleation on (0 0 0 1)-sapphire via ion-induced nitridation of gallium

Applied Surface Science

Volumn 252, Issue 21, 2006, Pages 7671-7677

  Sidorenko, A ^a   Peisert, H ^a   Neumann, H ^b   Chasse T ^a  

^a UNIVERSITY OF TÜBINGEN   (Germany)

^b LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

Author keywords

Epitaxial growth; GaN nucleation; Low energy electron diffraction (LEED); X ray photoelectron spectroscopy (XPS)

Indexed keywords

EPITAXIAL GROWTH; MATHEMATICAL MODELS; METALLIC FILMS; NUCLEATION; SAPPHIRE; X RAY PHOTOELECTRON SPECTROSCOPY;

DROPLETS; LOW ENERGY ELECTRON DIFFRACTION (LEED); NITRIDATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33747160172     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.03.053     Document Type: Article

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