In-situ ellipsometry: Identification of surface terminations during GaN growth

Physica Status Solidi C: Conferences

Volumn , Issue 8, 2003, Pages 2938-2943

  Cobet, C ^a   Schmidtling, T ^a   Drago, M ^a   Wollschlager, N ^a   Esser, N ^a   Richter, W ^a   Feenstra, R M ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAN SURFACES; GROWTH CONDITIONS; IN-SITU ELLIPSOMETRY; METAL-ORGANIC VAPOR PHASE EPITAXY; OPTICAL SPECTRA; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SURFACE TERMINATION; WURTZITE GAN;

EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SPECTROSCOPIC ELLIPSOMETRY; ZINC SULFIDE;

GALLIUM NITRIDE;

EID: 34548390208     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303833     Document Type: Conference Paper

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