Electronic structure of cubic gallium nitride films grown on GaAs

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 3, 1996, Pages 819-824

  Ding, S A ^a   Neuhold, G ^a   Weaver, J H ^a,c   Haberle P ^a,d   Horn, K ^a   Brandt, O ^b   Yang, H ^b   Ploog, K ^b  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c University of Minnesota   (United States)

^d DEPARTAMENTO DE FÍSICA   (Chile)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5844321303     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580396     Document Type: Article

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