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Volumn 86, Issue 7, 2005, Pages 1-3
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High-density self-assembled GaN nanoislands on SiC (0001) by molecular-beam epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CRYSTAL LATTICES;
CRYSTAL ORIENTATION;
DISLOCATIONS (CRYSTALS);
GALLIUM NITRIDE;
MOLECULAR BEAM EPITAXY;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SELF ASSEMBLY;
SILICON CARBIDE;
VACUUM;
ELASTIC STRAIN;
GAN NANOISLANDS;
MISFIT STRAIN;
STRANSKI-KRASTANOV (SK) GROWTH;
NANOSTRUCTURED MATERIALS;
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EID: 17044422607
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1865323 Document Type: Article |
Times cited : (4)
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References (14)
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