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Volumn 86, Issue 7, 2005, Pages 1-3

High-density self-assembled GaN nanoislands on SiC (0001) by molecular-beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL LATTICES; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SELF ASSEMBLY; SILICON CARBIDE; VACUUM;

EID: 17044422607     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1865323     Document Type: Article
Times cited : (4)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.