Lattice-matching SiC substrates with GaN

Applied Physics Letters

Volumn 69, Issue 2, 1996, Pages 251-253

  Ren, Shang Yuan ^a,b   Dow, John D ^b  

^a PEKING UNIVERSITY   (China)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000932166     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117940     Document Type: Article

References (25)

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5. L = 3.19 Å for GaN and 3.08 Å for 6H-SiC, from Ref. 6, giving Δa = 0.11 Å.
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10. Sapphire is the most widely used substrate for GaN despite having a different crystal structure, Δa/a = 13.8%,and a proclivity toward producing buckled surfaces with pyramidal features similar to those observed for 6H-SiCC-terminated substrates.
11. -3 as 1.46 Å. The covalent radius of N is listed as 0.75 Å, in Periodic Table of the Elements (Papertech Marketing Group, Inc., 163 Buttermilk Ave., Unit 12, Concord, Ontario L48 3X8 Canada, 1994).
12. -3 as 1.46 Å. The covalent radius of N is listed as 0.75 Å, in Periodic Table of the Elements (Papertech Marketing Group, Inc., 163 Buttermilk Ave., Unit 12, Concord, Ontario L48 3X8 Canada, 1994).
13. We reduced the covalent radii (Ref. 11) for Ga and N by 0.03 Å, in order to reproduce the measured lattice constant of GaN, 3.19 Å.
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15. -2, where d is the nearest-neighbor bond length, and we have A=0.51 X(Harrison's interatomic matrix elements), found on p. 551. The diagonal elements are Herman and Skillman (Ref. 15) energies for s- and p-valence electron states, as tabulated in Ref. 17.
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17. Similar superlattice Hamiltonians have been discussed in S. Y. Ren and J. D. Dow, Phys. Rev. B 39, 7796 (1989); J. Appl. Phys. 65, 1987 (1989).
18. Similar superlattice Hamiltonians have been discussed in S. Y. Ren and J. D. Dow, Phys. Rev. B 39, 7796 (1989); J. Appl. Phys. 65, 1987 (1989).
19. S. Y. Ren and J. D. Dow (unpublished).
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