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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 7 A, 2007, Pages 4011-4015

Low frequency noise in insulated-gate strained-Si n-channel modulation doped field effect transistors

(4) Rumyantsev, Sergey L a,b Fobelets, Kristel c Hackbarth, Thomas d Shur, Michael S a

a RENSSELAER POLYTECHNIC INSTITUTE (United States)

b IOFFE INSTITUTE (Russian Federation)

c IMPERIAL COLLEGE LONDON (United Kingdom)

d DAIMLER AG (Germany)

Author keywords

1 f noise; MODFET; MOSFET; Strained Si

Indexed keywords

CAPACITANCE; DEPOSITION; ELECTRIC CURRENTS; MOSFET DEVICES; THRESHOLD VOLTAGE;

CARRIERS FLUCTUATIONS; CHANNEL MODULATION;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 34547838358 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.46.4011 Document Type: Article

Times cited : (3)

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