On the low frequency noise mechanisms in GaN/AlGaN HFETs

Semiconductor Science and Technology

Volumn 18, Issue 6, 2003, Pages 589-593

  Rumyantsev, S L ^a,b   Deng, Y ^a   Shur, S ^a   Levinshtein, M E ^b   Asif Khan, M ^c   Simin, G ^c   Yang, J ^d   Hu, X ^d   Gaska, R ^d  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

^c University of South Carolina   (United States)

^d SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC POTENTIAL; ELECTRON TRAPS; ELECTRON TUNNELING; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SPURIOUS SIGNAL NOISE; THERMAL EFFECTS;

HOOGE PARAMETER;

FIELD EFFECT TRANSISTORS;

EID: 0037832767     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/6/333     Document Type: Article

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