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Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 16-23

Strain engineering in SOI-type materials for future technologies

(1) Ghyselen, Bruno a

a PARC TECHNOLOGIQUE DES FONTAINES (France)

Author keywords

SOI; Strain; Technologies

Indexed keywords

CHARGE CARRIERS; INTEGRATED CIRCUITS; MOSFET DEVICES; SILICON WAFERS; STRAIN;

CHARGE CARRIER MOBILITY; STRAIN ENGINEERING; WAFER MANUFACTURING TECHNIQUES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 27944470620 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2005.08.116 Document Type: Conference Paper

Times cited : (11)

References (30)

1
- 2342646326
- The latest International Technology Roadmap for Semiconductors (ITRS) is available on http://www.public.itrs.net/.
- The Latest International Technology Roadmap for Semiconductors (ITRS)

2
- 0034227743
- K. Rim, J.L. Hoyt, and J.F. Gibbons IEEE Trans. Electron. Dev. 47 2000 1406
- (2000) IEEE Trans. Electron. Dev. , vol.47 , pp. 1406
- Rim, K.¹ Hoyt, J.L.² Gibbons, J.F.³

3
- 0036931972
- S. Thompson, N. Anand, M. Amstrong, C. Auth, B. Arcot, M. Alavi, P. Bai, J. Bielefeld, R. Bigwood, J. Brandenburg, M. Buehler, S. Cea, V. Chikarmane, C. Choi, R. Frankovic, T. Ghani, G. Glass, W. Han, T. Hoffmann, M. Hussein, P. Jacob, A. Jain, C. Jan, S. Joshi, C. Kenyon, J. Klaus, S. Klopic, J. Luce, Z. Ma, B. McIntyre, K. Mistry, A. Murthy, P. Nguyen, H. Pearson, T. Sanford, R. Schweinfurth, R. Shaheed, S. Sivakumar, M. Taylor, B. Tufts, C. Wallace, P. Wang, C. Weber, and M. Bohr Proc. IEDM 2002 61 64
- (2002) Proc. IEDM , pp. 61-64
- Thompson, S.¹ Anand, N.² Amstrong, M.³ Auth, C.⁴ Arcot, B.⁵ Alavi, M.⁶ Bai, P.⁷ Bielefeld, J.⁸ Bigwood, R.⁹ Brandenburg, J.¹⁰ Buehler, M.¹¹ Cea, S.¹² Chikarmane, V.¹³ Choi, C.¹⁴ Frankovic, R.¹⁵ Ghani, T.¹⁶ Glass, G.¹⁷ Han, W.¹⁸ Hoffmann, T.¹⁹ Hussein, M.²⁰ more..

4
- 2342540383
- Q. Xiang, J.S. Goo, J. Pan, B. Yu, S. Ahmed, J. Zhang, and M.-R. Lin VLSI 2003 Tech. Digest 2003 101
- (2003) VLSI 2003 Tech. Digest , pp. 101
- Xiang, Q.¹ Goo, J.S.² Pan, J.³ Yu, B.⁴ Ahmed, S.⁵ Zhang, J.⁶ Lin, M.-R.⁷

5
- 13544257814
- T. Ghani, M. Armstrong, C. Auth, M. Bost, P. Charvat, G. Glass, T. Hoffmann, K. Johnson, C. Kenyon, J. Klaus, B. McIntyre, K. Mistry, A. Murthy, J. Sandford, M. Silberstein, S. Sivakumar, P. Smith, K. Zawadzki, S. Thompson, and M. Bohr Proc. IEDM 2003 978
- (2003) Proc. IEDM , pp. 978
- Ghani, T.¹ Armstrong, M.² Auth, C.³ Bost, M.⁴ Charvat, P.⁵ Glass, G.⁶ Hoffmann, T.⁷ Johnson, K.⁸ Kenyon, C.⁹ Klaus, J.¹⁰ McIntyre, B.¹¹ Mistry, K.¹² Murthy, A.¹³ Sandford, J.¹⁴ Silberstein, M.¹⁵ Sivakumar, S.¹⁶ Smith, P.¹⁷ Zawadzki, K.¹⁸ Thompson, S.¹⁹ Bohr, M.²⁰ more..

7
- 0343578945
- E.A. Fitzgerald, Y.-H. Xie, M.L. Green, D. Brasen, A.R. Kortan, J. Michel, Y.-J. Mii, and B.E. Weir Appl. Phys. Lett. 59 1991 811
- (1991) Appl. Phys. Lett. , vol.59 , pp. 811
- Fitzgerald, E.A.¹ Xie, Y.-H.² Green, M.L.³ Brasen, D.⁴ Kortan, A.R.⁵ Michel, J.⁶ Mii, Y.-J.⁷ Weir, B.E.⁸

8
- 12144288482
- J.M. Hartmann, Y. Bogumilowicz, P. Holliger, F. Laugier, R. Truche, G. Rolland, M.N. Séméria, V. Renard, E.B. Olshanetsky, O. Estibal, Z.D. Kvon, J.C. Portal, L. Vincent, F. Cristiano, and A. Claverie Semicond. Sci. Technol. 19 2004 311
- (2004) Semicond. Sci. Technol. , vol.19 , pp. 311
- Hartmann, J.M.¹ Bogumilowicz, Y.² Holliger, P.³ Laugier, F.⁴ Truche, R.⁵ Rolland, G.⁶ Séméria, M.N.⁷ Renard, V.⁸ Olshanetsky, E.B.⁹ Estibal, O.¹⁰ Kvon, Z.D.¹¹ Portal, J.C.¹² Vincent, L.¹³ Cristiano, F.¹⁴ Claverie, A.¹⁵

9
- 0342853202
- F. Schäffler Semiconductor Sci. Technol. 12 1997 1515
- (1997) Semiconductor Sci. Technol. , vol.12 , pp. 1515
- Schäffler, F.¹

10
- 0000633865
- K.K. Linder, F.C. Zhang, J.-S. Rieh, P. Bhattacharya, and D. Houghton Appl. Phys. Lett. 70 1997 3224
- (1997) Appl. Phys. Lett. , vol.70 , pp. 3224
- Linder, K.K.¹ Zhang, F.C.² Rieh, J.-S.³ Bhattacharya, P.⁴ Houghton, D.⁵

11
- 0034229205
- M. Bauer, K. Lyutovich, M. Oehme, E. Kasper, H.-J. Herzog, and F. Ernst Thin Solid Films 369 2000 152 156
- (2000) Thin Solid Films , vol.369 , pp. 152-156
- Bauer, M.¹ Lyutovich, K.² Oehme, M.³ Kasper, E.⁴ Herzog, H.-J.⁵ Ernst, F.⁶

12
- 0039557337
- M.T. Bulsara, V. Yang, A. Thilderkvist, and E.A. Fitzgerald J. Appl. Phys. 83 1998 592
- (1998) J. Appl. Phys. , vol.83 , pp. 592
- Bulsara, M.T.¹ Yang, V.² Thilderkvist, A.³ Fitzgerald, E.A.⁴

13
- 79955990553
- T. Mizuno, N. Sugiyama, T. Tezuka, and S.-I. Takagi Appl. Phys. Lett. 80 2002 601
- (2002) Appl. Phys. Lett. , vol.80 , pp. 601
- Mizuno, T.¹ Sugiyama, N.² Tezuka, T.³ Takagi, S.-I.⁴

14
- 0035903403
- T. Tezuka, N. Sugiyama, and S. Takagi Appl. Phys. Lett. 79 2001 1798
- (2001) Appl. Phys. Lett. , vol.79 , pp. 1798
- Tezuka, T.¹ Sugiyama, N.² Takagi, S.³

15
- 0036504842
- G. Tarashi, T.A. Langdo, M.T. Currie, E.A. Fitzgerald, and D.A. Antoniadis J. Vac. Sci. Technol. B 20 2002 725
- (2002) J. Vac. Sci. Technol. B , vol.20 , pp. 725
- Tarashi, G.¹ Langdo, T.A.² Currie, M.T.³ Fitzgerald, E.A.⁴ Antoniadis, D.A.⁵

16
- 0001115040
- L.J. Huang, J.O. Chu, D.F. Canaperi, C.P. D'Emic, R.M. Anderson, S.J. Koester, and H.-S. Philip Wong Appl. Phys. Lett. 78 2001 1267
- (2001) Appl. Phys. Lett. , vol.78 , pp. 1267
- Huang, L.J.¹ Chu, J.O.² Canaperi, D.F.³ D'Emic, C.P.⁴ Anderson, R.M.⁵ Koester, S.J.⁶ Philip Wong, H.-S.⁷

17
- 85166064401
- Santa Fe, 9-12th March
- B. Ghyselen, C. Aulnette, B. Osternaud, T. Akatsu, C. Mazure, C. Lagahe-Blanchard, S. Pocas, J.-M. Hartmann, P. Leduc, T. Ernst, H. Moriceau, Y. Campidelli, O. Kermarrec, P. Besson, Y. Morand, M. Rivoire, D. Bensahel, and V. Paillard Proc. 3rd Intern. Conference on SiGe(C) Epitaxy and heterostructures Santa Fe, 9-12th March 2003
- (2003) Proc. 3rd Intern. Conference on SiGe(C) Epitaxy and Heterostructures
- Ghyselen, B.¹ Aulnette, C.² Osternaud, B.³ Akatsu, T.⁴ Mazure, C.⁵ Lagahe-Blanchard, C.⁶ Pocas, S.⁷ Hartmann, J.-M.⁸ Leduc, P.⁹ Ernst, T.¹⁰ Moriceau, H.¹¹ Campidelli, Y.¹² Kermarrec, O.¹³ Besson, P.¹⁴ Morand, Y.¹⁵ Rivoire, M.¹⁶ Bensahel, D.¹⁷ Paillard, V.¹⁸

18
- 19944433362
- August
- B. Ghyselen, J.-M. Hartmann, T. Ernst, C. Aulnette, B. Osternaud, Y. Bogumilowicz, A. Abbadie, P. Besson, O. Rayssac, A. Tiberj, N. Daval, I. Cayrefourq, F. Fournel, H. Moriceau, C. Di Nardo, F. Andrieu, V. Paillard, M. Cabié, L. Vincent, E. Snoeck, F. Cristiano, A. Rocher, A. Ponchet, A. Claverie, P. Boucaud, M.-N. Semeria, D. Bensahel, N. Kernevez, C. Mazure, Solid State Electronics/Special issue on strained Si and heterostructures and Devices, August 2004.
- (2004) Solid State Electronics/Special Issue on Strained Si and Heterostructures and Devices
- Ghyselen, B.¹ Hartmann, J.-M.² Ernst, T.³ Aulnette, C.⁴ Osternaud, B.⁵ Bogumilowicz, Y.⁶ Abbadie, A.⁷ Besson, P.⁸ Rayssac, O.⁹ Tiberj, A.¹⁰ Daval, N.¹¹ Cayrefourq, I.¹² Fournel, F.¹³ Moriceau, H.¹⁴ Di Nardo, C.¹⁵ Andrieu, F.¹⁶ Paillard, V.¹⁷ Cabié, M.¹⁸ Vincent, L.¹⁹ Snoeck, E.²⁰ more..

19
- 0035301850
- B. Holländer, St. Lenk, S. Mantl, H. Trinkaus, D. Kirch, M. Luysberg, T. Hackbarth, H.-J. Herzog, and P.F.P. Fichtner Nucl. Instr. Meth. Phys. Res. B 175-177 2001 357 367
- (2001) Nucl. Instr. Meth. Phys. Res. B , vol.175-177 , pp. 357-367
- Holländer, B.¹ Lenk, St.² Mantl, S.³ Trinkaus, H.⁴ Kirch, D.⁵ Luysberg, M.⁶ Hackbarth, T.⁷ Herzog, H.-J.⁸ Fichtner, P.F.P.⁹

20
- 0034229176
- K.D. Hobart, F.J. Kub, M. Fatemi, M.E. Twigg, P.E. Thompson, T.S. Kuan, and C.K. Inoki J. Electron. Mater. 29 7 2000 897 900
- (2000) J. Electron. Mater. , vol.29 , Issue.7 , pp. 897-900
- Hobart, K.D.¹ Kub, F.J.² Fatemi, M.³ Twigg, M.E.⁴ Thompson, P.E.⁵ Kuan, T.S.⁶ Inoki, C.K.⁷

21
- 0037097914
- H. Yin, R. Huang, K.D. Hobart, Z. Suo, T.S. Kuan, C.K. Inoki, S.R. Shieh, T.S. Duffy, F.J. Kub, and J.C. Sturm J. Appl. Phys. 91 2002 9716
- (2002) J. Appl. Phys. , vol.91 , pp. 9716
- Yin, H.¹ Huang, R.² Hobart, K.D.³ Suo, Z.⁴ Kuan, T.S.⁵ Inoki, C.K.⁶ Shieh, S.R.⁷ Duffy, T.S.⁸ Kub, F.J.⁹ Sturm, J.C.¹⁰

22
- 85166092347
- Santa Barbara, USA
- M. Kostrzewa, G. Grenet, P. Regreny, J.L. Leclercq, N. Mokni, A. Danescu, F. Sidoroff, E. Jalaguier, P. Perreau, H. Moriceau, and G. Hollinger Proceedings of IPRM 2003 Santa Barbara, USA 2003
- (2003) Proceedings of IPRM 2003
- Kostrzewa, M.¹ Grenet, G.² Regreny, P.³ Leclercq, J.L.⁴ Mokni, N.⁵ Danescu, A.⁶ Sidoroff, F.⁷ Jalaguier, E.⁸ Perreau, P.⁹ Moriceau, H.¹⁰ Hollinger, G.¹¹

23
- 0042009849
- J.M. Hartmann, A. Abbadie, M. Vinet, L. Clavelier, P. Hollinger, D. Lafond, M.N. Séméria, and P. Gentile J. Cryst. Growth 257 2003 19
- (2003) J. Cryst. Growth , vol.257 , pp. 19
- Hartmann, J.M.¹ Abbadie, A.² Vinet, M.³ Clavelier, L.⁴ Hollinger, P.⁵ Lafond, D.⁶ Séméria, M.N.⁷ Gentile, P.⁸

24
- 14844317262
- K. Rim, K. Chan, L. Shi, D. Boyd, J. Ott, N. Klymko, F. Cardone, L. Tai, S. Koester, M. Cobb, D. Canaperi, B. To, E. Duch, I. Babich, R. Carruthers, P. Saunders, G. Walker, M. Steen, and M. Ieong Proc. IEDM 2003 Conf. 2003 49
- (2003) Proc. IEDM 2003 Conf. , pp. 49
- Rim, K.¹ Chan, K.² Shi, L.³ Boyd, D.⁴ Ott, J.⁵ Klymko, N.⁶ Cardone, F.⁷ Tai, L.⁸ Koester, S.⁹ Cobb, M.¹⁰ Canaperi, D.¹¹ To, B.¹² Duch, E.¹³ Babich, I.¹⁴ Carruthers, R.¹⁵ Saunders, P.¹⁶ Walker, G.¹⁷ Steen, M.¹⁸ Ieong, M.¹⁹

25
- 85166095704
- T.A. Langdo, A. Lochtefeld, M.T. Currie, R. Hammond, V.K. Yang, C.J. Vineis, H. Badawi, M.T. Bulsara, and E.A. Fitzgerald IEEE SOI Conference 2002
- (2002) IEEE SOI Conference
- Langdo, T.A.¹ Lochtefeld, A.² Currie, M.T.³ Hammond, R.⁴ Yang, V.K.⁵ Vineis, C.J.⁶ Badawi, H.⁷ Bulsara, M.T.⁸ Fitzgerald, E.A.⁹

26
- 0141453032
- T.S. Drake, C. Ni Chleirigh, M.L. Lee, A.J. Pitera, E.A. Fitzgerald, D.A. Antoniadis, D.H. Anjum, J. Li, R. Hull, N. Klymko, and J.L. Hoyt J. Electron. Mater. 32 2003 972
- (2003) J. Electron. Mater. , vol.32 , pp. 972
- Drake, T.S.¹ Ni Chleirigh, C.² Lee, M.L.³ Pitera, A.J.⁴ Fitzgerald, E.A.⁵ Antoniadis, D.A.⁶ Anjum, D.H.⁷ Li, J.⁸ Hull, R.⁹ Klymko, N.¹⁰ Hoyt, J.L.¹¹

27
- 85166045319
- G.K. Celler The Electrochemical Society, Pennington, NJ, USA*et al.
- I. Cayrefourcq, M. Kennard, F. Metral, C. Mazuré, A. Thean, M. Sadaka, T. White, and B.Y. Nguyen G.K. Celler Silicon-on-Insulator Technology and Devices XII ECS Proc., vol. 2005-03 The Electrochemical Society, Pennington, NJ, USA 2005
- (2005) Silicon-on-Insulator Technology and Devices XII ECS Proc., Vol. 2005-03
- Cayrefourcq, I.¹ Kennard, M.² Metral, F.³ Mazuré, C.⁴ Thean, A.⁵ Sadaka, M.⁶ White, T.⁷ Nguyen, B.Y.⁸

28
- 85166146630
- Japan, 23-26th May
- M. Kennard, C. Figuet, Y.-M. Le Vaillant, F. Triolet, C. Villeneuve, C. Aulnette, C. Berne, L. Portigliati, E. Guiot, N. Daval, R. Larderet, C. Le Moingne, S. Bisson, F. Métral, Z. Chahra, I. Cayrefourcq, C. Mazure, N. Cody, C. Arena, and C. Werkhoven Proc. 4th International Conference on Silicon Epitaxy and heterostructures (ICSI-4) Awaji island-Hyogo Japan, 23-26th May 2005
- (2005) Proc. 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4) Awaji Island-Hyogo
- Kennard, M.¹ Figuet, C.² Le Vaillant, Y.-M.³ Triolet, F.⁴ Villeneuve, C.⁵ Aulnette, C.⁶ Berne, C.⁷ Portigliati, L.⁸ Guiot, E.⁹ Daval, N.¹⁰ Larderet, R.¹¹ Le Moingne, C.¹² Bisson, S.¹³ Métral, F.¹⁴ Chahra, Z.¹⁵ Cayrefourcq, I.¹⁶ Mazure, C.¹⁷ Cody, N.¹⁸ Arena, C.¹⁹ Werkhoven, C.²⁰ more..

29
- 0042378545
- T.S. Drake, C. Ni Chleirigh, M.L. Lee, E.A. Fitzgerald, D.A. Antoniadis, D.H. Anjum, J. Li, R. Hull, N. Klymko, and J.L. Hoyt Appl. Phys. Lett. 83 2003 875
- (2003) Appl. Phys. Lett. , vol.83 , pp. 875
- Drake, T.S.¹ Ni Chleirigh, C.² Lee, M.L.³ Fitzgerald, E.A.⁴ Antoniadis, D.A.⁵ Anjum, D.H.⁶ Li, J.⁷ Hull, R.⁸ Klymko, N.⁹ Hoyt, J.L.¹⁰

30
- 85166147981
- A. Tiberj, V. Paillard, C. Aulnette, N. Daval, K. Bourdelle, M. Moreau, M. Kennard, and I. Cayrefourcq Mat. Res. Soc. Symp. Proc., vol. 809 2004
- (2004) Mat. Res. Soc. Symp. Proc., Vol. 809
- Tiberj, A.¹ Paillard, V.² Aulnette, C.³ Daval, N.⁴ Bourdelle, K.⁵ Moreau, M.⁶ Kennard, M.⁷ Cayrefourcq, I.⁸

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