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Volumn 8, Issue 1-3 SPEC. ISS., 2005, Pages 383-388
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Noise behavior of SiGe n-MODFETS
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Author keywords
Carrier number fluctuations; Low frequency noise; Mobility fluctuations; n MODFETS; Residual phase noise measurement; SiGe
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
ELECTRIC CONDUCTIVITY;
ION IMPLANTATION;
LEAKAGE CURRENTS;
NOISE GENERATORS;
OSCILLATORS (ELECTRONIC);
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR QUANTUM WELLS;
SPURIOUS SIGNAL NOISE;
CARRIER NUMBER FLUCTUATION;
LOW FREQUENCY NOISE;
MOBILITY FLUCTUATION;
N-MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET);
RESIDUAL PHASE NOISE MEASUREMENT;
SIGE;
FIELD EFFECT TRANSISTORS;
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EID: 13244257194
PISSN: 13698001
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mssp.2004.09.107 Document Type: Conference Paper |
Times cited : (3)
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References (11)
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