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Volumn 8, Issue 1-3 SPEC. ISS., 2005, Pages 383-388

Noise behavior of SiGe n-MODFETS

Author keywords

Carrier number fluctuations; Low frequency noise; Mobility fluctuations; n MODFETS; Residual phase noise measurement; SiGe

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ION IMPLANTATION; LEAKAGE CURRENTS; NOISE GENERATORS; OSCILLATORS (ELECTRONIC); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPURIOUS SIGNAL NOISE;

EID: 13244257194     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.107     Document Type: Conference Paper
Times cited : (3)

References (11)
  • 8
    • 0018433297 scopus 로고
    • Low frequency noise in schottky barrier diodes
    • T.G.M. Kleinpenning Low frequency noise in schottky barrier diodes Solid-State Electronics 22 1979 121 128
    • (1979) Solid-State Electronics , vol.22 , pp. 121-128
    • Kleinpenning, T.G.M.1
  • 9
    • 0014813349 scopus 로고
    • Low frequency excess noise in metal-silicon schottky barrier diodes
    • S.T. Hsu Low frequency excess noise in metal-silicon schottky barrier diodes IEEE Trans on Electron Devices 17 1970 496 506
    • (1970) IEEE Trans on Electron Devices , vol.17 , pp. 496-506
    • Hsu, S.T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.