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Volumn 48, Issue 8, 2004, Pages 1423-1431

Buried-channel SiGe HMODFET device potential for micropower applications

Author keywords

HFET; Low voltage; Micropower; Parameter extraction; SiGe

Indexed keywords

AMPLIFIERS (ELECTRONIC); BANDWIDTH; ELECTRIC NETWORK TOPOLOGY; EXTRAPOLATION; HEAT LOSSES; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SIGNAL TO NOISE RATIO; SURFACE ROUGHNESS; TRANSCONDUCTANCE;

EID: 2342559233     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.01.019     Document Type: Article
Times cited : (6)

References (19)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.