Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region

Journal of Applied Physics

Volumn 93, Issue 12, 2003, Pages 10030-10034

  Rumyantsev, S L ^a,b   Pala, N ^a,d   Shur, M S ^a   Levinshtein, M E ^b   Asif Khan, M ^c   Simin, G ^c   Yang, J ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

^c The Department of Mechanical Engineering   (United States)

^d SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; SEMICONDUCTING ALUMINUM COMPOUNDS; SPURIOUS SIGNAL NOISE;

DRAIN VOLTAGE;

HETEROJUNCTIONS;

EID: 0037805313     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1574599     Document Type: Article

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