1/f Noise in Si and Si0.7Ge0.3 pMOSFETs

IEEE Transactions on Electron Devices

Volumn 50, Issue 12, 2003, Pages 2513-2519

  Von Haartman, Martin ^a   Lindgren, Ann Chatrin ^a   Hellström, Per Erik ^a   Gunnar Malm, B ^a   Zhang, Shi Li ^a   Östling, Mikael ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY KTH   (Sweden)

Author keywords

1 f noise in MOSFETs; Low frequency (LF) noise; Mobility fluctuations; SiGe MOSFETs; Surface roughness scattering

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HOLE MOBILITY; MOSFET DEVICES; PHONONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SURFACE ROUGHNESS; TRANSCONDUCTANCE; TRANSISTORS;

CARRIER CONFINEMENT; LOW FREQUENCY (LF) NOISE; MOBILITY FLUCTUATIONS;

SPURIOUS SIGNAL NOISE;

EID: 0347968283     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.819258     Document Type: Article

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