Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Si n-MOSFETs

Semiconductor Science and Technology

Volumn 21, Issue 4, 2006, Pages 479-485

  Chen, P S ^a   Lee, S W ^b   Lee, M H ^c   Liu, C W ^c  

^a MINGHSIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; MOSFET DEVICES; OPTIMIZATION; RELAXATION PROCESSES; SUBSTRATES; THIN FILMS;

DISLOCATION LOOPS; LOW DISLOCATION DENSITY; RESIDUAL STRAIN; THREADING DISLOCATIONS (TD);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 33644974360     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/4/011     Document Type: Article

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