Average drift mobility and apparent sheet-electron density profiles in strained-Si-SiGe buried-channel depletion-mode n-MOSFETs

IEEE Transactions on Electron Devices

Volumn 51, Issue 8, 2004, Pages 1309-1314

  Michelakis, Kostis ^a   Vilches, Antonio ^a   Papavassiliou, Christos ^a   Despotopoulos, Solon ^a   Fobelets, Kristel ^a   Toumazou, Chris ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRON MOBILITY; HETEROJUNCTIONS; MESFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DRIFT MOBILITY; MOBILITY ENHANCEMENT; MODULATION DOPED FIELD EFFECT TRANSISTORS; SHOTTKY DEPLETION; SILICON GERMANIUM; STRAINED SILICON CHANNEL; STRAINED SILICON MOSFET;

MOSFET DEVICES;

EID: 3943064342     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.832727     Document Type: Article

References (9)

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