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Volumn 46, Issue 12, 2002, Pages 2281-2285

Low-frequency noise analysis of Si/SiGe channel pMOSFETs

Author keywords

1 f noise; Flicker noise; MOSFETs; SiGe

Indexed keywords

CHARGE CARRIERS; FERMI LEVEL; FREQUENCIES; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

EID: 0036890561     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00231-9     Document Type: Article
Times cited : (9)

References (11)
  • 1
    • 0036132437 scopus 로고    scopus 로고
    • Analysis of Si/SiGe channel pMOSFETs for deep-submicron scaling
    • Li P.W., Liao W.M. Analysis of Si/SiGe channel pMOSFETs for deep-submicron scaling. Solid-State Electron. 46:2002;39-44.
    • (2002) Solid-State Electron. , vol.46 , pp. 39-44
    • Li, P.W.1    Liao, W.M.2
  • 3
    • 0000006502 scopus 로고
    • Model for 1/f noise in metal-oxide-semiconductor transistors
    • Kleinpenning T.G.M., Vandamme L.K.J. Model for. 1/f noise in metal-oxide-semiconductor transistors J. Appl. Phys. 52:1981;1594.
    • (1981) J. Appl. Phys. , vol.52 , pp. 1594
    • Kleinpenning, T.G.M.1    Vandamme, L.K.J.2
  • 4
    • 0025398785 scopus 로고
    • A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors
    • Hung K.K., Ko P.K., Hu C. A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors. IEEE Trans. Electron Dev. 37:1990;654-664.
    • (1990) IEEE Trans. Electron Dev. , vol.37 , pp. 654-664
    • Hung, K.K.1    Ko, P.K.2    Hu, C.3
  • 6
    • 0003591919 scopus 로고    scopus 로고
    • Technology Modeling Associates, Inc.
    • TMA MEDICI version 2000.2, Technology Modeling Associates, Inc., 2000.
    • (2000) TMA MEDICI version 2000.2
  • 9
    • 0009509593 scopus 로고
    • Carrier mobilities in silicon empirically related to doping and field
    • Caughey D.M., Thomas R.E. Carrier mobilities in silicon empirically related to doping and field. Proc. IEEE. 55:1967;2192-2193.
    • (1967) Proc. IEEE , vol.55 , pp. 2192-2193
    • Caughey, D.M.1    Thomas, R.E.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.