Photoluminescence decay time and electroluminescence of p-Si/Β-FeSi2 particles/n-Si and p-Si/Β-FeSi2 film/n-Si double-heterostructures light-emitting diodes grown by molecular-beam epitaxy

Journal of Applied Physics

Volumn 101, Issue 12, 2007, Pages

  Suemasu, T ^a   Ugajin, Y ^a   Murase, S ^a   Sunohara, T ^a   Suzuno, M ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTROLUMINESCENCE; ELECTRON TRANSITIONS; HETEROJUNCTIONS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE;

ANOMALOUS TEMPERATURE; DECAY TIME; SEMIEMPIRICAL VARSHNI'S LAW; SUBSTRATE SURFACE;

SILICON;

EID: 34547295911     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2749200     Document Type: Article

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