Epitaxial growth and characterization of Si-based light-emitting Si/β-FeSi2 film/Si double heterostructures on Si(001) substrates by molecular beam epitaxy

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 371-375

  Sunohara, T ^a   Kobayashi, K ^a   Suemasu, T ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

FeSi2; Electroluminescence; LED; Reactive deposition epitaxy

Indexed keywords

ANNEALING; DEGRADATION; ELECTROLUMINESCENCE; HETEROJUNCTIONS; HIGH ENERGY ELECTRON DIFFRACTION; IRON COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POLYSILICON; SEMICONDUCTING SILICON;

Β-FESI2; LIGHT-EMITTING SI; REACTIVE DEPOSITION EPITAXY (RDE); REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION;

LIGHT EMITTING DIODES;

EID: 33748644441     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.343     Document Type: Article

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