Photoluminescence of Si layers grown on oxidized Si surfaces

Journal of Applied Physics

Volumn 101, Issue 3, 2007, Pages

  Shklyaev, A A ^a,b   Nakamura, Y ^a   Ichikawa, M ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; GROWTH (MATERIALS); HIGH TEMPERATURE EFFECTS; NUCLEATION; OXIDATION; SILICON; THERMAL EFFECTS;

OPTICAL EMISSIONS; THERMAL RELAXATION;

PHOTOLUMINESCENCE;

EID: 33847135655     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2435063     Document Type: Article

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