Growth of Si/β-FeSi2/Si double-heterostructures on Si(111) substrates by molecular-beam epitaxy and photoluminescence using time-resolved measurements

Journal of Applied Physics

Volumn 96, Issue 5, 2004, Pages 2561-2565

  Takauji, M ^a   Seki, N ^a   Suemasu, T ^a   Hasegawa, F ^a   Ichida, M ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b KONAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; FILM GROWTH; HIGH TEMPERATURE EFFECTS; ION BEAMS; MOLECULAR BEAM EPITAXY; PHOTOEMISSION; PHOTOLUMINESCENCE; SILICON; SUBSTRATES; SURFACES; X RAY DIFFRACTION;

ANNEALING TEMPERATURE; CONTINUOUS FILMS; DECAY TIME; DOUBLE HETEROSTRUCTURES; SILICON FILMS;

SEMICONDUCTING FILMS;

EID: 4944222819     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1774246     Document Type: Article

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