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Journal of Luminescence

Volumn 118, Issue 2, 2006, Pages 330-334

Temperature dependence of electroluminescence from Si-based light emitting diodes with β-FeSi2 particles active region

(3) Li, Cheng a Suemasu, T b Hasegawa, F b

a XIAMEN UNIVERSITY (China)

b UNIVERSITY OF TSUKUBA (Japan)

Author keywords

FeSi2; Electroluminescence; LED

Indexed keywords

CURRENT DENSITY; IRON COMPOUNDS; LIGHT EMITTING DIODES; SILICON; THERMAL EFFECTS;

BAND GAP ENERGY; BAND-TO-BAND TRANSITION; REACTIVE DEPOSITION EPITAXY;

ELECTROLUMINESCENCE;

EID: 32644464081 PISSN: 00222313 EISSN: None Source Type: Journal
DOI: 10.1016/j.jlumin.2005.09.011 Document Type: Article

Times cited : (7)

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