Epitaxial growth and luminescence characterization of Si/β-FeSi2/Si multilayered structures by molecular beam epitaxy

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 676-679

  Murase, S ^a   Sunohara, T ^a   Suemasu, T ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

A1. Electroluminescence; A1. Photoluminescence; A3. Molecular beam epitaxy; A3. Reactive deposition epitaxy; B2. FeSi2; B3. LED

Indexed keywords

ELECTROLUMINESCENCE; EPITAXIAL GROWTH; HETEROJUNCTIONS; IRON COMPOUNDS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON;

DEFECT LINES; DOUBLE HETEROSTRUCTURES (DH); MULTILAYERED STRUCTURES; REACTIVE DEPOSITION EPITAXY;

MULTILAYERS;

EID: 33947322981     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.055     Document Type: Article

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