Optimum annealing condition for 1.5 μm photoluminescence from β-FeSi2 balls grown by reactive deposition epitaxy and embedded in Si crystal

Journal of Luminescence

Volumn 87, Issue , 2000, Pages 528-531

  Suemasu, T ^a   Iikura, Y ^a   Takakura, K ^a   Hasegawa, F ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALS; DEPOSITION; EPITAXIAL GROWTH; IRON; QUENCHING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

CRYSTALLINE QUALITY; REACTIVE DEPOSITION EPITAXY; SEMICONDUCTING IRON DISILICIDE; THERMAL QUENCHING;

PHOTOLUMINESCENCE;

EID: 0033736906     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(99)00279-3     Document Type: Article

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