Fabrication of p-Si/β-FeSi2/n-Si double-heterostructure light-emitting diode by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2483-2486

  Takauji, Motoki ^a   Li, Cheng ^a   Suemasu, Takashi ^a   Hasegawa, Fumio ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

FeSi2; Double heterostructure; Electroluminescence; Light emitting diode

Indexed keywords

ANNEALING; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; HETEROJUNCTIONS; IRON COMPOUNDS; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; X RAY DIFFRACTION ANALYSIS;

Β-FESI2; CRYSTAL QUALITY; DOUBLE-HETEROSTRUCTURE; ROOM TEMPERATURE (RT);

LIGHT EMITTING DIODES;

EID: 21244501747     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2483     Document Type: Conference Paper

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