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Volumn 508, Issue 1-2, 2006, Pages 376-379
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Annealing temperature dependence of EL properties of Si/β-FeSi2/Si(111) double-heterostructures light-emitting diodes
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Author keywords
FeSi2; Annealing; Double heterostructures; Electroluminescence
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Indexed keywords
AGGLOMERATION;
ANNEALING;
ELECTROLUMINESCENCE;
HETEROJUNCTIONS;
MOLECULAR BEAM EPITAXY;
THIN FILMS;
DOUBLE-HETEROSTRUCTURES;
NONRADIATIVE RECOMBINATION CENTERS;
LIGHT EMITTING DIODES;
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EID: 33646095201
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2005.07.342 Document Type: Article |
Times cited : (19)
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References (26)
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