Time-resolved photoluminescence study of Si/β-FeSi2/Si structures grown by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 7 A, 2004, Pages

  Suemasu, Takashi ^a   Takauji, Motoki ^a   Li, Cheng ^a   Ozawa, Yoshinori ^a   Ichida, Masao ^b   Hasegawa, Fumio ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b KONAN UNIVERSITY   (Japan)

Author keywords

FeSi2; Decay time; Time resolved photoluminescence

Indexed keywords

DECAY TIME; TEMPERATURE DEPENDENCE; TIME-RESOLVED PHOTOLUMINESCENCE;

ANNEALING; ELECTRON GUNS; EVAPORATION; IRON COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING FILMS;

EID: 4444257324     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L930     Document Type: Article

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