Formation of β-FeSi2 layers on Si(001) substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 6 A, 1997, Pages 3620-3624

  Tanaka, Masaya ^a   Kumagai, Yoshinao ^a,b   Suemasu, Takashi ^a   Hasegawa, Fumio ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b Texas Instruments Japan Ltd   (Japan)

Author keywords

FeSi2; Absorption coefficient; Direct band gap; Reactive deposition epitaxy; Thermal reaction method

Indexed keywords

ABSORPTION COEFFICIENT; DEPOSITION RATE; GROWTH TEMPERATURE; IRON SILICIDE; REACTIVE DEPOSITION EPITAXY; THERMAL REACTION METHOD;

ABSORPTION; CRYSTAL GROWTH; CRYSTALS; DEPOSITION; ENERGY GAP; IRON; QUALITY ASSURANCE; THERMAL EFFECTS;

SILICON COMPOUNDS;

EID: 0031164248     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (25)

1. M. C. Bost and J. E. Mahan: J. Appl. Phys. 58 (1985) 2696.
2. M. C. Bost and J. E. Mahan: J. Vac. Sci. Technol. B 4 (1986) 1336.
3. X. Cherief, C. D'Anterroches, R. C. Cinti, T. A. Nguyen Tan and J. Derrien: Appl. Phys. Lett. 55 (1989) 1671.
4. J. E. Mahan, K. M. Geib, G. Y. Robinson, R. G. Long, X. Yan, G. Bai, M. A. Nicolet and M. Nathan: Appl. Phys. Lett. 56 (1990) 2126.
5. N. E. Christensen: Phys. Rev. B 42 (1090) 7148.
6. R. Eppenga: J. Appl. Phys. 68 (1990) 3027.
7. K. Radermacher, R. Carius snd S. Mantl: Nucl. Instrum. & Methods B 84 (1994) 163 .
8. M. C.Bost and J. E.Mahan: J. Appl. Phys. 64 (1988) 2034.
9. V. Bellani, G. Guizzetti, F. Marabelli and M. Patrini: Solid State Commun. 96 1995 751.
10. H. C. Cheng, T. R. Yer and L. J. Chen: J. Appl. Phys. 57 (1985) 5246.
11. C. A. Dimitriadis, J. II. Werner, S. Logothetidis, M. Stutzmann, J. Weber and R. Nesper: J. Appl. Phys. 68 (1990) 1726.
12. K. M. Geib, J. E. Mahan, R. G. Long, M. Nathan and G. Bai: J. Appl. Phys. 70 (1991) 1730.
13. A. H.Reader, J. P.W.B.Duchateaun, J. Timmers and F. J.G.Hakkens: Appl. Surf. Sci. 73 (1993) 3105.
14. L. Wang, L. Qin, Y. Zheng, Q. Shen, X. Chen, X. Lin, C. Lin and S. Zou: Appl. Phys. Lett. 65 (1994) 3105.
15. H. U.Nissen, E. Müller, H. R.Deller and H. von Känel: Phys. Status Solidi A 150 (1995) 395.
16. H. Sirringliaus, N. Onda, E. Müller-Gubler, P. Müller, R. Stalder and H. von Känel: Phys. Rev. B 47 (1993) 10567.
17. A. Rizzi, B. N.E.Rösen, D. Freund, C. Dicker and H. Lüth: Phys. Rev. B 51 (1995) 17780.
18. D. J.Oostra, C. W.T.Bulle-Lieuwma, D. E.W.Vandenhoudt, F. Felten and J. C.Jans: J. Appl. Phys. 4 (1993) 4347.
19. D. N.Leong, M. A.Harry, K. J.Reeson and K. P.Homewood: Appl. Phys. Lett. 68 (1996) 1649.
20. Z. Yang and K. P.Homewood: J. Appl. Phys. 79 (1996) 4312.
21. T. D. Hunt, K. J. Reeson, R. M. Gwilliam, K. P. Homewood, R. J. Wilson and B. J. Sealy: J. Lumin. 57 (1993) 25.
22. N. Kobayashi, H. Katsumata, H. L.Shen, M. Hasegawa, Y. Makita, H. Shibata, S. Kimura, A. Obara, S. Uekusa and T. Hatano: Thin Solid Films 270 (1995) 406.
23. L. Wang, Q. Shen, X. Chcn, X. Lin, C. Lin and S. Zou: Chin. Phys. Lett. 12 (1995) 301.
24. L. Wang, C. Lin, Q. Shen, R. Ni and S. Zou: Chin. Phys. Lett. 12 (1995) 613.
25. R. T.Tung, J. M.Poate, J. C.Bean, J. M.Gibson and D. C.Jacobson: Thin Solid Films 93 (1982) 77.