Time-resolved D-band luminescence in strain-relieved SiGe/Si

Applied Physics Letters

Volumn 68, Issue 14, 1996, Pages 1889-1891

  Fukatsu, S ^a   Mera, Y ^a   Inoue, M ^a   Maeda, K ^a   Akiyama, H ^b   Sakaki, H ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; DISLOCATIONS (CRYSTALS); LOW TEMPERATURE PHENOMENA; PHONONS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS;

BAND EDGE; DISLOCATION RELATED LUMINESCENCE BANDS; PHOTOLUMINESCENCE DECAY; RADIATIVE LIFETIMES; SILICON GERMANIDE; TIME RESOLVED ANALYSIS;

PHOTOLUMINESCENCE;

EID: 0030126475     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116284     Document Type: Article

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