Room temperature 1.6 μm electroluminescence from a Si-based light emitting diode with β-FeSi2 active region

Japanese journal of applied physics

Volumn 39, Issue 10 B, 2000, Pages

  Suemasu, Takashi ^a   Negishi, Yoichiro ^a   Takakura, Ken'ichiro ^a   Hasegawa, Fumio ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; CURRENT DENSITY; ELECTROLUMINESCENCE; EPITAXIAL GROWTH; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; TEMPERATURE;

REACTION DEPOSITION EPITAXY; SEMICONDUCTING SILICIDE;

LIGHT EMITTING DIODES;

EID: 0034292041     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l1013     Document Type: Article

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