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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 9 A/B, 1997, Pages

Aggregation of monocrystalline β-FeSi2 by annealing and by Si overlayer growth

(6) Suemasu, Takashi a Tanaka, Masaya a Fujii, Tetsuo a Hashimoto, Satoshi b Kumagai, Yoshinao b Hasegawa, Fumio a

a UNIVERSITY OF TSUKUBA (Japan)

b Texas Instruments Japan Ltd (Japan)

Author keywords

Aggregation; Reactive deposition epitaxy; Si MBE; XTEM; FeSi2

Indexed keywords

AGGLOMERATION; ANNEALING; FILM GROWTH; HIGH TEMPERATURE EFFECTS; IRON COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SINGLE CRYSTALS; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY; VACUUM APPLICATIONS;

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY (XTEM); REACTIVE DEPOSITION EPITAXY (RDE);

SEMICONDUCTING FILMS;

EID: 0031219815 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.l1225 Document Type: Article

Times cited : (50)

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