Room-temperature electroluminescence of a Si-based p-i-n diode with β-FeSi 2 particles embedded in the intrinsic silicon

Journal of Applied Physics

Volumn 97, Issue 4, 2005, Pages

  Li, Cheng ^a   Suemasu, T ^b   Hasegawa, F ^b  

^a XIAMEN UNIVERSITY   (China)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BAND OFFSET; CURRENT PEAK DENSITY; REACTIVE DEPOSITION EPITAXY; THRESHOLD CURRENTS;

CRYSTAL STRUCTURE; CURRENT DENSITY; DOPING (ADDITIVES); ELECTROLUMINESCENCE; EPITAXIAL GROWTH; HETEROJUNCTIONS; IRON COMPOUNDS; MAGNETRON SPUTTERING; OPTOELECTRONIC DEVICES; SEMICONDUCTING SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

LIGHT EMITTING DIODES;

EID: 13844298098     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1855397     Document Type: Article

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