Comparison of solid-state microwave annealing with conventional furnace annealing of ion-implanted SiC

Journal of Electronic Materials

Volumn 36, Issue 4, 2007, Pages 324-331

  Sundaresan, Siddarth G ^a   Rao, Mulpuri V ^a   Tian, Yonglai ^b   Schreifels, John A ^c   Wood, Mark C ^d   Jones, Kenneth A ^d   Davydov, Albert V ^e  

^a Krasnow Institute for Advanced Study   (United States)

^b LT Technologies   (United States)

^c GEORGE MASON UNIVERSITY   (United States)

^d U S ARMY RESEARCH LABORATORY   (United States)

^e NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Implantation; Silicon carbide; Solid state microwave annealing

Indexed keywords

FURNACE ANNEALING; RUTHERFORD BACKSCATTERING (RBS) MEASUREMENTS; SECONDARY-ION-MASS-SPECTROMETRY (SIMS); SOLID-STATE MICROWAVE ANNEALING;

ANNEALING; HEATING; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; SURFACE ROUGHNESS;

MICROWAVES;

EID: 34249000819     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0032-1     Document Type: Conference Paper

References (29)

1. C.E. Weitzel, J.W. Palmour, A.H. Carter, K. Moore, K.K. Nordquist, S. Allen, C. Thero, and M. Bhatnagar, IEEE Trans. Electron. Dev. 43, 1732 (1996).
2. J.B. Tucker, S. Mitra, N. Papanicolaou, A. Siripuram, M.V. Rao, and O.W. Holland, Diamond Relat. Mater. 11, 392 (2002).
3. S.-H. Ryu, S. Krishnaswami, M. O'Loughlin, J. Richmond, A. Agarwal, J. Palmour, and A. Hefner, IEEE Electron. Dev. Lett. 25, 556 (2004).
4. J.H. Zhao, P. Alexandrov, J. Zhang, and X. Li, IEEE Electron. Dev. Lett. 25, 474 (2004).
5. K.J. Schoen, J.M. Woodall, J.A. Cooper, and M.R. Melloch, IEEE Trans. Electron. Dev. 45, 1595 (1998).
6. R. Singh, D.C. Capell, A.R. Hefner, J. Lai, and J.W. Palmour, IEEE Trans. Electron. Dev. 49, 2054 (2002).
7. T. Kimoto and N. Inoue, Phys. Status Solidi. A. 162, 263 (1997).
8. T. Troffer, M, Schadt, T. Frank, H, Itoh, G. Pensl, J. Heindl, H.P. Strunk, and M. Maier, Phys. Status Solidi. A 162, 277 (1997).
9. C. Thomas, C. Taylor, J. Griffin, W.L. Rose, M.G. Spencer, M, Capano, S. Rendakova, and K. Kornegay, MRS Proc. 572, 45 (1999).
10. G.J. Phelps, N.G. Wright, E.G. Chester, C.M. Johnson, and A. O'Neill, Semicond. Sci. Technol. 17, L17 (2002).
11. L. Zhu, M. Shanbhag, T.P. Chow, K.A. Jones, M.H. Ervin, P.B. Shah, M.A. Derenge, R.D. Vispute, T. Venkatesan, and A. Agarwal, Mater. Sci. Forum 433, 843 (2003).
12. Y. Negoro, K. Katsumoto, T. Kimoto, and H. Matsunami, J. Appl. Phys. 96, 224 (2004).
13. M.A. Capano, S. Ryu, J.A. Cooper, Jr., M.R. Melloch, K. Rottner, Karlsson, N. Nordell, A. Powell, and D.E. Walker, Jr. (1999). J. Electron. Mater. 28:214.
14. K.V. Vassilevski, A.B. Horsfall, C.M. Johnson, and N.G. Wright, Mater. Sci. Forum 457, 989 (2004).
15. M.V. Rao, Solid State Electron. 47, 213 (2003).
16. M.A. Capano, S. Ryu, M.R. Melloch, J.A. Cooper Jr., and M.R. Buss, J. Electron. Mater. 27, 370 (1998).
17. Y. Tanaka, H. Tanoue, and K. Arai, J. Appl. Phys. 93, 5934 (2003).
18. S.D. Ruksell and A.D. Ramirez, Appl. Phys. Lett. 74, 3368 (2002).
19. K. Hata, A. Kawazu, T. Okano, T, Ueda, and M. Akiyama, Appl. Phys. Lett. 63, 1625 (1993).
20. V.R. Vathulya and M.H. White, Solid-State Electron. 44, 309 (2000).
21. S.C. Singhal, J. Mater. Sci. 11, 1246 (1976).
22. C. Raynaud, J. Non-Cryst. Sol. 280, 1 (2001).
23. T. Narushima, T, Goto, and T. Hirai, J. Am. Cer. Soc. 72, 1386 (1989).
24. G. Pensl, V. Afanasev, M. Bassler, M. Schadt, T. Troffer, J. Heindl, H. Strunk, M. Maier, and W. Choyke, Inst. Phys. Conf. Ser. 142, 275 (1996).
25. M.V. Rao, J.B. Tucker, M.C. Ridgway, O.W. Holland, N. Papanicolaou, and J. Mittereder, J. Appl. Phys. 86, 752 (1999).
26. Y. Negoro, T. Kimoto, H. Matsunami, F. Schmid, and G. Pensl, J. Appl. Phys. 96, 4916 (2004).
27. W.C, Mitchel, A.O. Evwaraye, S.R. Smith, and M.D. Roth, J. Electron. Mater. 26, 113 (1997).
28. K. Tone, S.P. Weiner, and J.H. Zhao, Electron. Lett. 33, 1904 (1997).
29. H. Wirth, D. Panknin, W. Skorupa, and E. Niemann, Appl. Phys. Lett. 74, 979 (1999).