Carbon and aluminium co-implantation for p-type doping in 6H-SiC

Electronics Letters

Volumn 33, Issue 22, 1997, Pages 1904-1906

  Tone, K ^a   Weiner, S R ^a   Zhao, J H ^a  

^a RUTGERS UNIVERSITY   (United States)

Author keywords

Ion implantation; Ohmic contacts; Silicon carbide

Indexed keywords

ALUMINUM; ANNEALING; CARBON; ELECTRIC CONDUCTIVITY OF SOLIDS; ION IMPLANTATION; OHMIC CONTACTS; SILICON CARBIDE; SILICON WAFERS;

SPECIFIC CONTACT RESISTANCE;

SEMICONDUCTOR DOPING;

EID: 0031245096     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971254     Document Type: Article

References (8)

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